International Journal For Multidisciplinary Research

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HOT CARRIER DYNAMICS: A PERSPECTIVE ON THEIR POTENTIAL TO IMPROVE NEXT-GENERATION PHOTOVOLTAIC EFFICIENCY

Author(s) Mr. Sharad Kumar Srivastava, Dr. Rajeev Ranjan
Country India
Abstract The Shockley-Queisser limit, a theoretical efficiency limit of roughly 33%, is approaching for silicon-based solar cells, which presently control most of the photovoltaic (PV) market. The worldwide search for next-generation PV technologies with noticeably better performance has accelerated due to this limitation. The development of hot carrier solar cells (HCSCs), which seek to use photogenerated charge carriers before they lose surplus energy through thermalization, is one of the most promising strategies. Useful photon energy is quickly transformed into heat by this process. This energy loss mechanism substantially limits the efficiency of traditional solar cells.
HCSCs seek to overcome this limitation by incorporating materials with slow carrier cooling rates and energy-selective contacts that extract only carriers within specific energy ranges. These components enable higher photovoltage and improved energy conversion. This article explores the physics of hot carrier generation, thermal relaxation, and transport. It examines advanced materials such as lead halide perovskites, quantum dots, transition metal dichalcogenides, and III-V semiconductors that exhibit potential for hot carrier applications.
Recent experimental progress and theoretical models are discussed, along with the technological barriers that must be addressed—such as contact fabrication, thermal management, and material stability. With potential efficiencies exceeding 60%, HCSCs offer a transformative path toward ultra-high-efficiency photovoltaic systems.
Keywords Hot Carrier Dynamics, Photovoltaics, Carrier Thermalization, Next-Generation Solar Cells, Efficiency Enhancement, Energy Selective Contacts
Field Physics > Energy
Published In Volume 7, Issue 3, May-June 2025
Published On 2025-06-25
DOI https://doi.org/10.36948/ijfmr.2025.v07i03.49168
Short DOI https://doi.org/g9rsk2
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