Integrated Frameworks for Modeling Growth and Transport in Advanced Compound Semiconductor Nanostructures

Author(s)	Dr. ADITI SHARMA
Country	India
Abstract	The transition from bulk substrates to nanostructured compound semiconductors represents a pivotal shift in the design of next-generation electronic and optoelectronic devices. While materials such as III-V nanowires and 2D binary compounds offer superior carrier mobility and tunable band gaps, their practical deployment is hindered by complex growth kinetics and defect-mediated transport variability. This paper presents a comprehensive research framework that bridges the gap between epitaxial growth modeling and device-level transport simulation. By synthesizing theoretical models of dual-adatom diffusion and droplet epitaxy with quantum ballistic transport formalisms, we propose a unified methodology for predicting the performance of compound semiconductor devices. We validate this approach by analyzing the effects of stoichiometric vacancies, surface states, and geometric confinement on device characteristics. The proposed framework aims to enhance the integration of high-mobility compound semiconductors onto silicon platforms, addressing critical challenges in scaling and variability.
Keywords	Compound semiconductors; III–V nanowires; Droplet epitaxy; Quantum ballistic transport; Defect-mediated transport; Silicon platform integration.
Field	Physics
Published In	Volume 8, Issue 2, March-April 2026
Published On	2026-03-03

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