Gallium Nitride Power Electronics for Electric Vehicles

Author(s)	Prof. Pratima Hemant Gedam
Country	India
Abstract	The rapid adoption of electric vehicles (EVs) has increased the demand for highly efficient power electronic systems. Conventional silicon-based power devices face limitations in switching frequency, power density, and thermal performance. Gallium Nitride (GaN) technology has emerged as a promising alternative due to its superior electrical characteristics, including high electron mobility, low switching losses, and high breakdown voltage. This paper examines the application of GaN power electronics in electric vehicles, highlighting their advantages, performance improvements, challenges, and future prospects. The study demonstrates that GaN-based converters and inverters can significantly enhance EV efficiency, reduce system size, and improve overall vehicle performance.
Keywords	Gallium Nitride, Power Electronics, Electric Vehicles, GaN Transistors, High-Efficiency Converters, EV Charging Systems
Field	Engineering
Published In	Volume 8, Issue 3, May-June 2026
Published On	2026-06-06

About IJFMR Fees & Payment Current Issue Publication Archive	Submit Research Paper Track Submission Status Publication Guidelines Publication Ethics Peer Review & Plagiarism	Join as a Reviewer Editors & Reviewers Reviewer Referral Program Get Reviewer Membership Certi.	Website/Journal Policies Usage Policy Content Policies Privacy Policy

Contact Us		+91-9687-828-838	editor@ijfmr.com

International Journal For Multidisciplinary Research