Linearity Enhanced Ultra-Wideband CMOS Low Noise Amplifier Using Active Feedforward and Weak Inversion Post Distortion Transistor

Nileshkumar K. Patel; Hasmukh P. Koringa

doi:10.36948/ijfmr.2026.v08i02.71599

Linearity Enhanced Ultra-Wideband CMOS Low Noise Amplifier Using Active Feedforward and Weak Inversion Post Distortion Transistor

Author(s)	Mr. Nileshkumar K. Patel, Dr. Hasmukh P. Koringa
Country	India
Abstract	This paper presents a wideband Common-Gate Common-Source (CG-CS) Low Noise Amplifier (LNA) with enhanced linearity, designed and simulated in 45 nm GPDK045 CMOS technology using Cadence Virtuoso. The circuit extends an active feedforward noise-cancellation architecture by incorporating a post-distortion transistor Mpd permanently biased in the subthreshold (weak inversion) region. An active feedforward stage, composed of transistor M3n and resistor R3 in the main path, simultaneously achieves Gm-boosting, DC current reduction, and noise cancellation. The noise cancellation (NC) condition is N=gm2.Rs, whenever which both the common-gate device M1n and the Gm-boost stage M3n have their noise theoretically nulled at the output. Linearity is enhanced by the addition of transistor Mpd, with its gate connected to node Q (drain of M1n) and its drain tied directly to output node S. By keeping Mpd in the subthreshold region via bias voltage Vpd, Mpd exhibits a positive third-order transconductance derivative g''mpd > 0 opposite to the compressive g''m < 0 of the strong-inversion main-path transistors M1n and M2. A rigorous third-order Taylor-series nonlinear analysis confirms that the IM3 intermodulation distortion (IM3) currents from M1n and M3n, already suppressed via the same NC mechanism as their noise, are further attenuated by the compensating nonlinear current injected by Mpd. Because Mpd conducts only microampere-level current in weak inversion, the IIP3 improvement comes at negligible extra power. Pre-layout and post-layout Cadence Virtuoso simulations in GPDK045 validate the design for ultra-wideband (UWB) and 5G multi-standard receiver front-ends.
Keywords	Low Noise Amplifier (LNA), Active Feedforward, Gm-Boosting, Noise Cancellation, Post-Distortion, Weak Inversion, IIP3, Wideband, CMOS, GPDK045, UWB, 5G
Field	Engineering
Published In	Volume 8, Issue 2, March-April 2026
Published On	2026-04-03
DOI	https://doi.org/10.36948/ijfmr.2026.v08i02.71599

View / Download PDF File

E-ISSN 2582-2160

doi

CrossRef DOI is assigned to each research paper published in our journal.

IJFMR DOI prefix is
10.36948/ijfmr

Downloads

Research Paper Format Copyright Permission Form and Undertaking Form Cover Page Vol 8 Isu 2 Cover Page Vol 8 Isu 1 Cover Page Vol 7 Isu 6

All research papers published on this website are licensed under Creative Commons Attribution-ShareAlike 4.0 International License, and all rights belong to their respective authors/researchers.

CC-BY-SA

About IJFMR Fees & Payment Current Issue Publication Archive	Submit Research Paper Track Submission Status Publication Guidelines Publication Ethics Peer Review & Plagiarism	Join as a Reviewer Editors & Reviewers Reviewer Referral Program Get Reviewer Membership Certi.	Website/Journal Policies Usage Policy Content Policies Privacy Policy

Contact Us		+91-9687-828-838	editor@ijfmr.com

International Journal For Multidisciplinary Research

A Widely Indexed Open Access Peer Reviewed Multidisciplinary Bi-monthly Scholarly International Journal

Linearity Enhanced Ultra-Wideband CMOS Low Noise Amplifier Using Active Feedforward and Weak Inversion Post Distortion Transistor

Share this